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Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes.

Zheng Jiang¹, Jie Yang², Wenbin Wang¹

¹Jiangsu Collaborative Innovation Center for Advanced Inorganic Functional Composites, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, 211816, China.

Angewandte Chemie (International Ed. in English)

|June 11, 2025

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Tin-based perovskites offer eco-friendly, high-performance light-emitting diodes (LEDs). A new buried-interface-modification strategy improves Sn-based perovskite film crystallization, boosting LED efficiency.

Area of Science:

Materials Science
Optoelectronics
Solid-State Chemistry

Background:

Tin (Sn)-based perovskites are promising for environmentally friendly and high-performance light-emitting diodes (LEDs).
Development of Sn-based perovskite LEDs (PeLEDs) lags behind lead-based counterparts due to rapid crystallization and high defect density, causing non-radiative recombination.
Defects in Sn-based perovskite films hinder their efficiency and stability for optoelectronic applications.

Purpose of the Study:

To develop a strategy to control the crystallization kinetics of Sn-based perovskite films.
To improve the quality of Sn-based perovskite films for high-performance PeLEDs.
To address the limitations of Sn-based perovskites in achieving efficient light emission.

Main Methods:

Keywords:

Buried interface Crystallization Light‐emitting diodes Modification Tin‐based perovskites

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Demonstrated a buried-interface-modification (BIM) strategy using carboxylate as multifunctional surface modifiers.

Regulated the nucleation and crystallization processes of Sn-based perovskite films.

Investigated the critical role of the buried interface in film formation.

Main Results:

Achieved efficient near-infrared Sn-based PeLEDs with an external quantum efficiency (EQE) of 11.9%.
The BIM strategy effectively regulated crystallization kinetics, leading to improved film quality.
Demonstrated that the buried interface is crucial for enhanced nucleation and crystallization.

Conclusions:

The BIM strategy provides an efficient and elegant route for obtaining high-performance Sn-based perovskite films.
This approach can significantly advance the development of Sn-based PeLEDs.
Interface engineering is key to overcoming the challenges in Sn-based perovskite optoelectronics.