A complementary two-dimensional material-based one instruction set computer

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Engineering

Background:

• Silicon scaling challenges necessitate exploring new materials for advanced semiconductor technology.
• Two-dimensional (2D) materials offer atomic thickness and high carrier mobility as alternatives to silicon.
• Achieving complementary metal-oxide-semiconductor (CMOS) integration with 2D materials remains a significant hurdle.

Purpose of the Study:

• To present a 2D one instruction set computer (OISC) based on CMOS technology.
• To demonstrate the heterogeneous integration of n-type MoS2 and p-type WSe2 field-effect transistors (FETs).
• To overcome integration challenges and enable high-performance 2D electronic circuits.

Main Methods:

• Heterogeneous integration of large-area n-type MoS2 and p-type WSe2 FETs.
• Optimization of channel length, high-κ gate dielectric, material growth, and device postprocessing.
• Tailoring threshold voltages for both n- and p-type 2D FETs to enhance performance.

Main Results:

• Achieved high drive currents and reduced subthreshold leakage in 2D FETs.
• Enabled circuit operation below 3V with an operating frequency up to 25kHz.
• Demonstrated ultra-low power consumption in the picowatt range and switching energy as low as ~100pJ.

Conclusions:

• The developed 2D OISC represents a significant milestone in applying 2D materials to microelectronics.
• Projected performance benchmarks against silicon technology indicate the potential of 2D materials.
• Further advancements are needed, but this work signifies a crucial step towards 2D material-based integrated circuits.