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Updated: Jun 13, 2025
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
In-Plane Field Enabled Dissociation Dynamics of Defect-Bound Excitons and Excitonic Oscillator Strength
Rupali Verma1, Utpreksh Patbhaje1, Mayank Shrivastava1
1Department of Electronic Systems Engineering, Indian Institute of Science Bangalore, Bangalore 560012, India.
Applying an electric field to monolayer tungsten disulfide (WS₂) dynamically shifts oscillator strength between excitonic states. This reveals complex exciton-defect interactions crucial for tuning optoelectronic properties in 2D semiconductors.
Area of Science:
- Condensed matter physics
- Materials science
- Quantum optics
Background:
- Monolayer transition metal dichalcogenides (TMDs) exhibit strong excitonic complexes.
- These systems are crucial for understanding many-body physics and light-matter interactions in 2D semiconductors.
Purpose of the Study:
- To investigate the effect of in-plane electric fields on excitonic states in monolayer WS₂.
- To elucidate exciton-defect interactions and their influence on optoelectronic properties.
Main Methods:
- Experimental investigation of monolayer WS₂.
- Application of in-plane electric fields to tune excitonic states.
- Spectroscopic analysis of oscillator strength redistribution.
Main Results:
- Demonstrated dynamic redistribution of oscillator strength among excitonic states (trions, biexcitons, localized excitons, neutral excitons) under electric field.
- Unveiled complex exciton-defect interactions and coupling mechanisms.
- Showcased field-induced modulation of many-body interactions and optoelectronic properties.
Conclusions:
- In-plane electric fields offer dynamic control over excitonic properties in monolayer WS₂.
- Understanding exciton-defect interactions is key to tuning optoelectronic behavior.
- Findings are relevant for developing tunable photonic devices and advancing quantum information technologies.
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