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Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures.

Omar Concepción1, Ambrishkumar J Devaiya1, Marvin H Zoellner2

  • 1Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|June 12, 2025
PubMed
Summary

Introducing carbon into silicon-germanium-tin (SiGeSn) alloys creates novel direct-gap group-IV materials. These carbon-containing alloys enhance infrared light emission for advanced electronic and optoelectronic devices.

Keywords:
C(Si)GeSn alloysRP‐CVDepitaxial growthmulti quantum wells

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Silicon-germanium-tin (SiGeSn) alloys show promise as direct-gap materials for infrared lasers.
  • Extending the functionality of group IV alloys requires incorporating elements like carbon to tune properties.

Purpose of the Study:

  • To explore the heteroepitaxial growth of carbon-containing silicon-germanium-tin (CSiGeSn) alloys.
  • To investigate the impact of carbon incorporation on the structural, electronic, and optical properties of GeSn alloys.

Main Methods:

  • Heteroepitaxial growth of CGeSn alloys using reduced-pressure chemical vapor deposition.
  • Controlled incorporation of carbon using CBr4 precursor.
  • Fabrication and characterization of CGeSn/GeSn multiple quantum well light-emitting diodes (LEDs).

Main Results:

  • Controlled carbon incorporation (<1 at.%) and increased tin content (up to ~18 at.%) achieved.
  • Carbon modulates strain, stabilizes crystal structure, and enhances optical emission.
  • LEDs based on CGeSn/GeSn heterostructures exhibit enhanced near-infrared emission at 2.54 µm, sustained to room temperature.

Conclusions:

  • Carbon incorporation is a viable strategy to engineer direct-gap group IV alloys.
  • CSiGeSn alloys offer expanded functionality for nanoelectronics, energy harvesting, and quantum computing.
  • The developed CGeSn/GeSn heterostructures demonstrate potential for advanced optoelectronic applications.