Related Experiment Video
Updated: Jun 14, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electronic transport properties in lithium cobalt oxide battery electrode material studied in ion-gated transistor
Melchiade Manirakiza1,2, José Ramón Herrera Garza1,2, Ramin Karimi Azari1
1Department of Engineering Physics, Polytechnique Montreal, Montreal, QC H3C 3A7, Canada.
Abstract:
Li-ion battery (LIB) electrode materials feature mixed electronic-ionic transport. Their electronic conductivity is expected to depend on the degree of de-lithiation/lithiation, but it is challenging to evaluate such dependence as disentangled from ionic conductivity. Herein, we use the Ion-Gated Transistor (IGT) configuration to study the dependence of the electronic conductivity of lithium cobalt oxide (LiCoO2 or LCO)-based composite cathode material. LCO-based composite is employed as transistor channel interfaced with the ionic liquids: 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) and 1-Butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide ([PYR14][TFSI]), both without and with lithium bis(trifluoromethane)sulfonimide salt (LiTFSI). The gate-source bias controls the degree of lithiation/de-lithiation in the LCO composite-based IGT. We observed an increase in the drain-source transistor current upon the application of a gate-source bias, i.e., upon Li+ de-intercalation from the LCO composite cathode material. Our results pave the way for the in operando evaluation of the state-of-charge (SOC) of LIB electrode materials, crucial for their efficient and sustainable use.
Related Concept Videos
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Ionic Bonding and Electron Transfer
Bipolar Junction Transistor

