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Recent Research Progress of Antimony-Based Two-Dimensional Materials for Electronics and Optoelectronics
Teng Li1, Xiaoyu He2, Jia Yang1
1National Engineering Research Center of Vacuum Technology, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China.
Abstract:
Two-dimensional (2D) materials, with their atomic-layer thickness and exceptional properties, have garnered significant attention for next-generation integrated circuits. Among these, 2D antimony (Sb)-based materials distinguish themselves through outstanding physical properties, natural abundance, and remarkable stability. Despite their potential, a comprehensive review summarizing advancements in 2D Sb-based materials remains absent. This review addresses this critical gap by presenting an in-depth analysis of recent progress in 2D Sb-based materials, specifically, antimonene, antimony chalcogenides (Sb2X3, X = S, Se, Te), antimony oxides (α-, β-, and γ-Sb2O3, and SbO1.93), antimonides (e.g., NdSb2), and complex polycompounds such as quaternary CdSb2Se3Br2, focusing on their crystal structures, synthesis techniques, applications, and future prospects. By providing valuable insights into the potential of 2D Sb-based materials, our review aims to inspire further research into their practical applications and address the challenges that lie ahead for future electronics and optoelectronics.
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