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Updated: Jun 14, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Direct Observation of Dipole Formation Triggered by Interlayer Sliding at Atomic Level in Semimetal MoTe2
Lin Liao1,2, Xianli Su1, Hao Luo1,2
1State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
Abstract:
Octahedral MoTe2 is a nonpolar 1T' phase and transforms into polar Td phase at ∼260 K, along with the change of the layer stacking order. However, as it is difficult to capture the interlayer sliding at atomic resolution, the polarization formation mechanism of MoTe2 by cooling to low temperature remains largely unclear. Here, we address the challenge by in situ cryo-(S)TEM to trace the interlayer sliding at the atomic level and the induced polarization in vdW-layered MoTe2. When it is in the range of 300-193 K, we observed the step-by-step formation of the local Td domain within the 1T'-I domain. Moreover, we present an atomic-scale observation of the disordered mixed stacking of 1T'/Td phases at 110 K. Two possible sliding models are built with the sliding energy barriers (2.7 and 5.3 meV/u.c.), indicating thermally accessible sliding behavior. Our investigation of sliding-induced polarization provides meaningful insights for developing sliding ferroelectric-based nonvolatile memory devices.
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