Optimization of Diamond Polishing Process for Sub-Nanometer Roughness Using Ar/O₂/SF₆ Plasma

Diamond, known for its exceptional physical and chemical properties, shows great potential in advanced fields such as medicine, semiconductors, and optics. However, reducing surface roughness is critical for enhancing its performance. This study employs inductively coupled plasma (ICP) polishing to etch single-crystal diamond and analyzes the impact of different etching parameters on surface roughness using atomic force microscopy (AFM). Using the change in surface roughness before and after etching as the main evaluation metric, the optimal etching parameters were determined: Ar/O₂/SF₆ gas flow ratio of 40/50/10 sccm, ICP power of 200 W, RF bias power of 40 W, chamber pressure of 20 mTorr, and etching time of 10 min. Results show that increased etching time and SF₆ flow rate raise surface roughness; although higher ICP and RF power reduce roughness, they also cause nanostructure formation, affecting surface quality. Lower chamber pressure results in smaller roughness increases, while higher pressure significantly worsens it. Based on the optimized process parameters, the pristine single-crystal diamond was further etched in this study, resulting in a significant reduction of the surface roughness from 2.22 nm to 0.562 nm, representing a 74.7% decrease. These improvements in surface roughness demonstrate the effectiveness of the optimized process, enhancing the diamond's suitability for high-precision optical applications.