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A general "gas-liquid" synthesis strategy towards centimeter-scale two-dimensional non-layered semiconductors
Jiahui Liu1, Jiangbo Yuan1, Hao Liu1
1College of Materials Science and Engineering, Zhengzhou University Zhengzhou 450001 China qunxu@zzu.edu.cn weicong@zzu.edu.cn.
Chemical Science
|June 13, 2025
Summary
A novel gas-liquid reaction strategy enables the large-scale synthesis of 2D non-layered semiconductors like CdS. This method produces centimeter-scale films with tunable thickness, suitable for high-performance photodetectors and optoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Two-dimensional (2D) non-layered semiconductors offer unique properties distinct from their layered counterparts.
- Current limitations in large-scale synthesis methods hinder the practical application of these 2D non-layered materials.
Purpose of the Study:
- To develop a scalable method for synthesizing 2D non-layered semiconductor films.
- To investigate the growth mechanism and properties of these materials for optoelectronic applications.
Main Methods:
- A gas-liquid heterogeneous reaction strategy was employed to control reactant diffusion and promote anisotropic growth.
- Centimeter-scale 2D non-layered CdS films were grown at the gas-liquid interface.
- Film thickness was modulated by adjusting the viscosity of the liquid solvent.
Main Results:
- Centimeter-scale 2D non-layered CdS films with tunable thickness (10-50 nm) were successfully synthesized.
- Photodetectors fabricated on CdS films demonstrated high photoswitching ratios (up to 2 × 10^3), high specific detectivity (∼10^11 Jones), and excellent stability.
- The gas-liquid strategy was generalized to synthesize other 2D materials, including ZnS, TiO2, SnO2, and MoS2.
Conclusions:
- The proposed gas-liquid heterogeneous reaction strategy offers a universal approach for wafer-scale growth of 2D materials, particularly non-layered types.
- This breakthrough facilitates the development of advanced 2D materials for integrated optoelectronics.
