Related Experiment Video
Updated: Jun 16, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Non-Majorana origin of anomalous current-phase relation and Josephson diode effect in Bi2Se3/NbSe2 Josephson
Andrei Kudriashov1,2, Xiangyu Zhou1,2, Razmik A Hovhannisyan3
1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
Abstract:
Josephson junctions (JJs) are key to superconducting quantum technologies and the search for self-conjugate quasiparticles potentially useful for fault-tolerant quantum computing. In topological insulator (TI)-based JJs, measuring the current-phase relation (CPR) can reveal unconventional effects such as Majorana bound states (MBS) and nonreciprocal transport. However, reconstructing CPR as a function of magnetic field has not been attempted. Here, we present a platform for field-dependent CPR measurements in planar JJs made of NbSe2 and few-layer Bi2Se3. When a flux quantum [Formula: see text] threads the junction, we observe anomalous peak-dip CPR structure and nonreciprocal supercurrent flow. We show that these arise from a nonuniform supercurrent distribution that also leads to a robust and tunable Josephson diode effect. Furthermore, despite numerous previous studies, we find no evidence of MBS. Our results establish magnetic field-dependent CPR as a powerful probe of TI-based superconducting devices and offer design strategies for nonreciprocal superconducting electronics.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Schottky Barrier Diode
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

