Related Experiment Video

Updated: Jun 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K

Non-volatile and multistate terahertz response in semi-floating-gate graphene field-effect transistors

Jingjing Fu, Mengjian Xu, Miao Cai

    Optics Express
    |June 14, 2025
    PubMed
    Abstract

    More Related Videos

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    11.5K
    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection07:51

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

    Published on: February 1, 2022

    3.2K

    Related Concept Videos

    Field Effect Transistor01:29

    Field Effect Transistor

    Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
    338
    MOSFET01:16

    MOSFET

    The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
    In an n-MOSFET, the structure includes n-type source and drain...
    433
    Characteristics of MOSFET01:17

    Characteristics of MOSFET

    Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
    Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
    354
    MOSFET: Enhancement Mode01:22

    MOSFET: Enhancement Mode

    Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
    In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
    303
    MOSFET: Depletion Mode01:20

    MOSFET: Depletion Mode

    Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
    The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
    330
    Biasing of FET01:22

    Biasing of FET

    Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
    In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
    235