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Updated: Jul 18, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
755 nm InP/GaAs0.65P0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band
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InP/GaAs0.65P0.35 quantum dot (QD) lasers with variable polarization are demonstrated through the tailoring of band alignment. Different band alignments of type-I and type-II are realized during QD growth with varied parameters. The energy shift of type-I structure is observed to be much lower than that of type-II. Furthermore, type-I and type-II band ridge waveguide lasers were investigated. For type-I and type-II band lasers, the lowest thresholds are 0.37 and 0.40 kA/cm2, respectively, and different polarization characteristics are achieved. We observed transverse electric (TE) and transverse magnetic (TM) polarized light resulted from different band alignments, and the degree of polarization (DOP) reached 80%. These results indicate that InP/GaAs0.65P0.35 QDs can be potentially used in devices with desired polarization.
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