Related Experiment Video
Updated: Jun 16, 2025

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
Published on: September 25, 2020
Silicon photonic MEMS 2 × 2 elementary switch based on horizontal adiabatic directional couplers
None:
High-speed data processing requires large-scale photonic integrated circuits, in which photonic switches serve as essential components for reconfiguration. Micro-electromechanical-system (MEMS)-based photonic switches, particularly those utilizing adiabatic directional couplers (ADCs), offer advantages such as broad bandwidth, exceptional fabrication tolerance, and digital operation. However, previous ADC-based switches are limited to 1 × 2 configurations, restricting their compatibility with diverse array topologies. Here, we propose a novel silicon photonic MEMS 2 × 2 switch based on horizontal ADCs (HADCs) which is compatible with all mainstream array topologies. In simulation, the switch features low insertion loss of 6-19 mdB/7-32 mdB and low crosstalk of -44.1 - -37.4 dB/-32 - -22.6 dB in broad bandwidth of 1500-1600 nm in the OFF/ON state, respectively. Experimental results demonstrate insertion loss of 0.15-0.7 dB/1.1-1.6 dB, crosstalk of -48.6 - -40.1 dB/-9.2 - -8.4 dB in the OFF/ON state, respectively. The measured switch performance in the ON state can be further improved by using more comprehensive coordinated photonic/mechanical design or low-strain SOI wafers to suppress the waveguide buckling in our future work. Additionally, fast ON/OFF switching speed of 2.6/1.8 μs and reliable durability of >109 switching cycles have been demonstrated experimentally. This 2 × 2 switch design addresses critical limitations of previous architectures and is a promising approach for versatile applications including microwave photonics, photonic interconnects, LiDAR, and spectrometers.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Types of Semiconductors
Schottky Barrier Diode

