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Nuclear reaction transmutation doping in GaN-HEMT MOSFETs

  • 1Department of Physics, School of Sciences, Jain University, Bangalore 560069, India.
  • 2Department of Physics, School of Sciences, Jain University, Bangalore 560069, India. Electronic address: dinesh.kumar@jainuniversity.ac.in.
  • 3Department of Physics, University of Calicut, Calicut University P.O., 673635, India.
  • 4UGC-DAE-Consortium for Scientific Research, Kolkata, West Bengal, 700098, India.
  • 5Analytical Chemistry Division, BARC-VECC, Kolkata, 700064, India.
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June 14, 2025

Abstract

Alpha-induced doping of GaN-High Electron Mobility Transistor (HEMT) was performed employing 45 MeV-α beam. The population of n-type and p-type dopants was identified and quantified by analysing the induced activities of the contributing nuclear reactions. The population was reproduced theoretically, using TALYS -1.96 nuclear reaction model, and the population of non-radioactive dopants was also estimated using the same model. The analysis shows a significant population of Ge and As isotopes, leading to intense n-type doping in the GaN-HEMT semiconductor.

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