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Updated: Jun 16, 2025

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Nuclear reaction transmutation doping in GaN-HEMT MOSFETs.

Rijin N T1, Dinesh Kumar1, M M Musthafa2

  • 1Department of Physics, School of Sciences, Jain University, Bangalore 560069, India.

Applied Radiation and Isotopes : Including Data, Instrumentation and Methods for Use in Agriculture, Industry and Medicine
|June 14, 2025
PubMed
Summary
This summary is machine-generated.

Alpha-induced doping of Gallium Nitride-High Electron Mobility Transistors (GaN-HEMTs) resulted in significant n-type doping. Germanium and Arsenic isotopes were identified as key dopants, impacting semiconductor properties.

Keywords:
Cross-sectionGaNIntegral yieldRadiation induced effectsTALYS-1.96 code

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Area of Science:

  • Materials Science
  • Nuclear Physics
  • Semiconductor Physics

Background:

  • Gallium Nitride-High Electron Mobility Transistors (GaN-HEMTs) are crucial for high-frequency and high-power electronics.
  • Doping is essential for tailoring the electrical properties of semiconductors like GaN.
  • Understanding dopant species and concentrations is vital for device performance optimization.

Purpose of the Study:

  • To investigate alpha-induced doping in GaN-HEMTs.
  • To identify and quantify n-type and p-type dopants introduced by alpha particle irradiation.
  • To theoretically model the dopant population using nuclear reaction simulations.

Main Methods:

  • Irradiation of GaN-HEMTs with a 45 MeV alpha beam.
  • Analysis of induced activities from nuclear reactions to identify and quantify dopants.
  • Theoretical simulation of nuclear reactions using the TALYS-1.96 model.

Main Results:

  • Significant population of Germanium (Ge) and Arsenic (As) isotopes was observed.
  • These isotopes lead to intense n-type doping in the GaN-HEMT semiconductor.
  • The TALYS-1.96 model accurately reproduced the experimental dopant population and estimated non-radioactive dopants.

Conclusions:

  • Alpha-induced doping is an effective method for introducing n-type dopants into GaN-HEMTs.
  • Ge and As are identified as primary dopants contributing to n-type conductivity.
  • Nuclear reaction modeling provides a reliable approach for predicting dopant profiles in irradiated semiconductors.