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InAsSb single crystal with compositional homogeneity grown in outer space.

Jidong Huang^1,2, Zhigang Yin^1,2, Jinliang Wu¹

¹State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, China.

National Science Review

|June 16, 2025

Summary

Researchers grew a superior indium arsenide antimonide (InAsSb) single crystal on the China Space Station. This space-grown crystal exhibited enhanced crystallinity and uniform composition compared to Earth-based samples.

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Area of Science:

Materials Science
Crystal Growth
Semiconductor Physics

Background:

Indium arsenide antimonide (InAsSb) is a crucial semiconductor material for infrared optoelectronics.
Achieving high-quality InAsSb crystals with controlled composition is challenging due to phase separation and native defects.
Microgravity environments offer unique conditions for crystal growth, potentially overcoming terrestrial limitations.

Purpose of the Study:

To investigate the growth of InAsSb single crystals in a microgravity environment aboard the China Space Station.
To evaluate the impact of space growth on the crystallinity and compositional homogeneity of InAsSb.
To compare the properties of space-grown InAsSb with its terrestrial counterpart.

Main Methods:

Single crystal growth of InAsSb (6.7 mol% Sb) using a directional solidification method on the China Space Station.
Characterization of the grown crystal using techniques such as X-ray diffraction (XRD) and electron probe microanalysis (EPMA).
Comparative analysis of structural and compositional properties with conventionally grown terrestrial InAsSb.

Main Results:

Successful growth of an InAsSb single crystal with 6.7 mol% Sb in microgravity.
Demonstrated superior crystallinity, evidenced by reduced lattice defects and improved crystalline perfection.
Observed enhanced compositional homogeneity throughout the crystal, with minimal phase segregation.
Significant improvement in crystal quality compared to Earth-grown InAsSb.

Conclusions:

Microgravity conditions aboard the China Space Station facilitate the growth of high-quality InAsSb single crystals.
Space-grown InAsSb exhibits superior crystallinity and compositional uniformity, beneficial for advanced electronic and optoelectronic applications.
This study highlights the potential of space-based manufacturing for advanced semiconductor materials.