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Updated: Sep 19, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Space-averaged non-equilibrium Green's function approach for quantum transport in 3D.
Vahid Mosallanejad1,2, Kuei-Lin Chiu3, Wenjie Dou1,2
1School of Science, Westlake University, Hangzhou, Zhejiang 310024, People's Republic of China.
This study introduces a 3D finite-volume implementation of the non-equilibrium Green's function (NEGF) method for mesoscopic systems. This new approach overcomes challenges in simulating nanoscale electronic devices, enabling accurate modeling of open quantum systems.
Area of Science:
- Computational Physics
- Quantum Mechanics
- Materials Science
Background:
- Mesoscopic systems and nanoscale electronic devices require advanced simulation methods.
- Existing 2D non-equilibrium Green's function (NEGF) implementations face limitations in three dimensions.
- Effective-mass based 3D NEGF simulations are crucial for next-generation devices.
Purpose of the Study:
- To extend a 2D finite-volume (FV) implementation of NEGF to a full 3D framework.
- To address key implementation challenges associated with 3D NEGF simulations.
- To provide a practical tool for simulating open quantum systems in three dimensions.
Main Methods:
- Development of a 3D finite-volume (FV) discretization for the NEGF approach.
- Comparison with traditional Finite Difference (FD) implementations of NEGF.
- Formulation for evaluating self-energies, incorporating reservoir effects.
Main Results:
- Demonstration of FV discretization's effectiveness in overcoming 3D NEGF implementation challenges.
- Successful evaluation of self-energies within the 3D FV-NEGF framework.
- Illustration of the method's applicability through two distinct examples.
Conclusions:
- The developed 3D FV-NEGF implementation offers a robust solution for simulating mesoscopic systems.
- This method is particularly valuable for open quantum systems requiring a fully three-dimensional domain.
- The work paves the way for more accurate simulations of complex nanoscale electronic devices.
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