Stacking-controlled magnetic anisotropy switching in bilayer Janus Mn2Cl3Br3

Yanle Liang1, Heng Gao1, Hui Zhang1

  • 1Physics Department, Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Institute for Quantum Science and Technology, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China. gaoheng@shu.edu.cn.

Summary

Bilayer Janus Mn2Cl3Br3 shows tunable magnetic anisotropy energy (MAE) switching between in-plane and out-of-plane orientations, driven by stacking and halogen interactions. This discovery is key for designing novel 2D spintronic materials.

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