Rationally Designed Versatile Heterostructures Consisted of Two-Dimensional Goldene and MXene Sc₂CF₂

The rational design of two-dimensional (2D) metal-semiconductor (M-S) heterostructures through contact engineering is crucial for the development of next-generation nanoelectronic devices. In this Letter, van der Waals design strategies were employed to explore the contact characteristics between goldene and MXene Sc₂CF₂. Our findings reveal that n-type Schottky contacts are formed across all goldene/Sc₂CF₂ heterostructures. Notably, this heterostructure exhibits reversible switching between n- and p-type Schottky contacts and can be tuned from Schottky to ohmic contacts via electric gating and vertical strain. Furthermore, goldene/Sc₂CF₂ exhibits a low tunneling specific resistivity of 2.80 × 10^-10 Ω cm², indicating its excellent charge injection efficiency. These findings offer valuable theoretical guidance for the design and optimization of goldene-based devices, such as field-effect transistors (FETs) and photodetectors.