Plasmonic printing of high-performance metal oxide electronics under room temperature

Solution-processed metal oxide (MO) thin-film transistors present substantial promise for next-generation large-area, low-cost electronics. However, challenges like prolonged high-temperature annealing (at >400 °C) and a lack of universal, high-resolution printing technology hinder their widespread applications. Here we report a processing technology, termed 'plasmonic printing', for fabricating high-performance, solution-processed all-MO thin-film electronics under room temperature and ambient conditions. This process leverages femtosecond-laser-excited silver nanowires to induce plasmonic local heating, facilitating rapid (<0.3 s) and localized conversion of MO precursors into high-quality MO thin films, including conductor, dielectric and semiconductor. Remarkably, these MO thin films exhibit superior electrical performance without the requirement of special gases or high-temperature treatment, thereby enhancing the fabrication efficiency. Furthermore, precise pattern control is demonstrated, enabling the fabrication of high-density, solution-processed all-MO transistor arrays (48,400 transistors per square centimetre) and integrated logic gates with uniformity and precision. This technology presents a promising pathway for the cost-effective and high-throughput printing of high-density, complex, multilayered solution-processed MO electronics, delivering performance on par with vacuum-based counterparts.