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Published on: July 11, 2025
Tunable layer-specific polarizability in twisted multilayer graphene flakes capped with hexagonal boron nitride
Xian Wang1, Wenfeng Guang1, Yunpeng Lu1
1School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, Singapore 637371.
We developed a new method to analyze dielectric properties in twisted multilayer graphene (TMG) and hexagonal boron nitride (hBN) materials. This approach reveals how intralayer and interlayer polarizabilities affect electric field responses, crucial for advanced electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Dielectric properties of low-dimensional materials like twisted multilayer graphene (TMG) capped with hexagonal boron nitride (hBN) are complex.
- The dielectric constant alone is insufficient for characterizing their response to electric fields.
- Accurate measurement and control of field response are challenging.
Purpose of the Study:
- To develop a site-specific polarizability decomposition approach for TMG@hBN.
- To separate and analyze intra- and interlayer polarizabilities.
- To understand the influence of twist angle and hBN encapsulation on dielectric properties.
Main Methods:
- First-principles calculations were employed to develop a site-specific polarizability decomposition method.
- The method was applied to 2580 configurations of TMG flakes with and without hBN encapsulation.
- Layer-resolved analysis of intra- and interlayer contributions was performed.
Main Results:
- Intralayer polarizability dominates the overall dielectric response, while interlayer polarizability dictates variations with twist angle.
- hBN encapsulation enhances interlayer polarizability and reduces its twist-angle dependence.
- Significant interlayer charge transfer response (γ) was observed in outermost graphene layers (γGra) and hBN (γBN), with opposite signs and field-dependent variations.
Conclusions:
- The developed method provides layer-resolved insights into dielectric properties of TMG@hBN.
- Understanding these contributions is key for tuning electric field responses.
- This work offers new strategies for optimizing graphene-based optoelectronic devices.
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