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Rapid Screening of Single-Atom Catalyst Synthesis Conditions Using ToF-SIMS and Facet-Dependent Single-Crystal
Juejing Liu1, Yining Wang1, Ping Chen1
1Physical & Computational Science Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States.
Analytical Chemistry
|June 20, 2025
Summary
Developing single-atom catalysts (SACs) is accelerated by a new method using time-of-flight secondary ion mass spectroscopy (ToF-SIMS). This technique rapidly identifies optimal synthesis conditions and deposition mechanisms for diverse SACs.
Area of Science:
- Materials Science
- Catalysis
- Surface Science
Background:
- Single-atom catalysts (SACs) exhibit enhanced performance over nanoparticle catalysts.
- Developing SACs requires extensive optimization and specialized characterization, hindering rapid progress.
Purpose of the Study:
- To introduce a rapid and versatile method for detecting synthesis conditions of SACs.
- To elucidate the deposition mechanisms of SACs on various substrates.
- To enable faster development of next-generation SACs.
Main Methods:
- Depositing active elements (Au, Cu, Ni, Rh) on facet-specific single-crystalline substrates (CeO2, TiO2, MgO, Al2O3).
- Utilizing time-of-flight secondary ion mass spectroscopy (ToF-SIMS) to analyze deposition behaviors.
- Assessing facet-dependent deposition and identifying optimal solution-based synthesis conditions.
Main Results:
- ToF-SIMS revealed diverse deposition behaviors: single-atom site formation, cluster aggregation, or no deposition.
- Observed deposition varied based on the active element, substrate type, and substrate facet.
- The technique rapidly differentiated these outcomes across multiple material systems.
Conclusions:
- Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) is a viable tool for rapid screening of SAC synthesis conditions.
- This method facilitates faster and more efficient development of advanced single-atom catalysts.
- Understanding deposition mechanisms is crucial for optimizing SAC synthesis.

