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Updated: Sep 18, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Basal slip in the long-period stacking-ordered (LPSO) phases in the Mg-Zn-Y ternary system
Kyosuke Kishida1, Atsushi Inoue1, Yu Matsuo1
1Department of Materials Science and Engineering, Kyoto University, Kyoto, Japan.
Abstract:
Influences of the stacking sequence and in-plane ordering of Zn6Y8 atomic clusters on the basal slip in long-period stacking-ordered (LPSO) phases in the Mg-Zn-Y systems were investigated by micropillar compression of single crystals at room temperature. The critical resolved shear stress (CRSS) values for basal slip do not depend much on the stacking sequence of the LPSO structures and the degree of the in-plane ordering of Zn6Y8 atomic clusters. The CRSS values increase with the decrease in the specimen size, following an inverse power-law relationship with a very large power-law exponent of about 0.88. Atomic-resolution scanning transmission electron microscopy (STEM) imaging of core structures of basal edge dislocations in the Mg-Zn-Y LPSO phase with a perfect in-plane ordering of Zn6Y8 atomic clusters revealed that the Burgers vector is b = (a/3)[2 0] and the basal dislocations glide between the atomic planes which do not cut through Zn6Y8 atomic clusters.
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