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Oxidation-State-Dependent Selective Atomic Layer Etching of Metal Oxides
Jeongbin Lee1,2, Jae-Hong Noh1, Jung-Tae Kim1,2
1Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, Gyeonggi 15588, Republic of Korea.
ACS Applied Materials & Interfaces
|June 23, 2025
Summary
This study introduces a novel atomic layer etching (ALE) method for metal oxides using acetylacetone and ozone. This technique enables precise, oxidation-state-dependent material removal for advanced nanoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Atomic layer etching (ALE) is crucial for sub-10 nm nanoelectronics manufacturing.
- Area-selective deposition and ALE synergy enhance precision in material control.
- Existing ALE methods require tailored processes for diverse materials.
Purpose of the Study:
- To develop a selective atomic layer etching (ALE) method for various metal oxides.
- To leverage chelate coordination properties for oxidation state-dependent etching.
- To enable precise material removal for advanced nanoelectronic fabrication.
Main Methods:
- Utilized acetylacetone (Hacac) and ozone (O3) for ALE on ZnO, MgO, Al2O3, Y2O3, SiO2, and ZrO2.
- Exploited β-diketonate chelate coordination to form volatile metal complexes.
- Employed X-ray fluorescence, ellipsometry, SEM, EDX, QCM, and RGA for characterization and mechanism elucidation.
Main Results:
- Demonstrated selective ALE on multiple metal oxides based on metal oxidation state.
- Achieved precise, oxidation state-dependent material removal through volatile chelate complex formation.
- Validated layer-by-layer etching and elucidated the etching mechanism via in situ monitoring.
Conclusions:
- Developed a versatile ALE method for tailored etch processes in nanoelectronics.
- Oxidation state-dependent etching offers enhanced selectivity and control for complex architectures.
- This approach advances precise material removal essential for cutting-edge nanoelectronic devices.
