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Oxidation-State-Dependent Selective Atomic Layer Etching of Metal Oxides.

Jeongbin Lee1,2, Jae-Hong Noh1, Jung-Tae Kim1,2

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Summary

This study introduces a novel atomic layer etching (ALE) method for metal oxides using acetylacetone and ozone. This technique enables precise, oxidation-state-dependent material removal for advanced nanoelectronics.

Keywords:
acetylacetoneangström-level controlatomic layer etchingoxidation stateselective removal

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Atomic layer etching (ALE) is crucial for sub-10 nm nanoelectronics manufacturing.
  • Area-selective deposition and ALE synergy enhance precision in material control.
  • Existing ALE methods require tailored processes for diverse materials.

Purpose of the Study:

  • To develop a selective atomic layer etching (ALE) method for various metal oxides.
  • To leverage chelate coordination properties for oxidation state-dependent etching.
  • To enable precise material removal for advanced nanoelectronic fabrication.

Main Methods:

  • Utilized acetylacetone (Hacac) and ozone (O3) for ALE on ZnO, MgO, Al2O3, Y2O3, SiO2, and ZrO2.
  • Exploited β-diketonate chelate coordination to form volatile metal complexes.
  • Employed X-ray fluorescence, ellipsometry, SEM, EDX, QCM, and RGA for characterization and mechanism elucidation.

Main Results:

  • Demonstrated selective ALE on multiple metal oxides based on metal oxidation state.
  • Achieved precise, oxidation state-dependent material removal through volatile chelate complex formation.
  • Validated layer-by-layer etching and elucidated the etching mechanism via in situ monitoring.

Conclusions:

  • Developed a versatile ALE method for tailored etch processes in nanoelectronics.
  • Oxidation state-dependent etching offers enhanced selectivity and control for complex architectures.
  • This approach advances precise material removal essential for cutting-edge nanoelectronic devices.