Novel insights into GaN-HEMT behaviour under multi-particle irradiation.

Area of Science:

• Materials Science
• Semiconductor Physics
• Nuclear Engineering

Background:

• Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) are crucial for high-power electronics.
• Understanding radiation effects on GaN-HEMTs is vital for reliable operation in harsh environments.

Purpose of the Study:

• To investigate the electrical characteristic changes in GaN-HEMTs under photon, neutron, and alpha irradiation.
• To elucidate the underlying physics of radiation-induced damage mechanisms.

Main Methods:

• Experimental analysis of electrical characteristics (drain current, I_D-V_D) of GaN-HEMTs post-irradiation.
• Development of a quantum mechanical methodology to model radiation stress effects.

Main Results:

• Photon irradiation decreased drain current, attributed to δ-rays and crystal defects.
• Neutron irradiation shifted the I_D-V_D saturation region due to capture and scattering.
• Alpha particles induced combined atomic, nuclear, and δ-ray effects, plus heating.
• Knee voltage remained largely unaffected, indicating damage to lattice and transport, not thresholds.

Conclusions:

• Different irradiation types induce distinct damage mechanisms in GaN-HEMTs.
• Radiation primarily impacts crystal lattice and electron transport, not fundamental operational thresholds.
• Quantum mechanical modeling provides insight into displacement damage and transmutation effects.