Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

508
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
508
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
MOS Capacitor01:25

MOS Capacitor

998
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
998
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

493
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
493
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

343
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
343
MOSFET01:16

MOSFET

592
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
592

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

On-Water Surface Synthesis of 2D Conjugated Metal-Organic Framework Films With Controllable Layer Orientation Enabling High-Performance Chemiresistive Sensing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultranarrow nanochannels in a staggered two-dimensional polymer membrane enhance electric double-layer coverage for osmotic energy harvesting.

Nature communications·2026
Same author

Defects That Magnetize Beyond Monolayer PtSe<sub>2</sub>.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Strain-Field-Induced Bandgap Opening in Bilayer Graphene.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Spin Injection and Emission Helicity Switching in a 2D Perovskite/WSe<sub>2</sub> Heterostructure.

Nano letters·2026
Same author

Metal-Free Ferromagnetism in Triangulene Two-Dimensional Frameworks.

Journal of the American Chemical Society·2026

Related Experiment Video

Updated: Sep 18, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K

Computational Guide to Optimize Electric Conductance in MoS2 Films.

Alireza Ghasemifard1,2,3, Agnieszka B Kuc2,3, Thomas Heine1,2,3,4

  • 1Theoretical Chemistry, TU Dresden, Bergstraße 66c, 01062 Dresden, Germany.

ACS Applied Materials & Interfaces
|June 25, 2025
PubMed
Summary

Molybdenum disulfide (MoS2) thin films show tunable electronic properties due to edge states and flake overlaps. Simulations reveal how these factors control conductivity, enabling optimized material design for nanoelectronics.

Keywords:
2D plateletsDFTMoS2electric conductancethin filmstransport calculations

More Related Videos

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

6.6K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Related Experiment Videos

Last Updated: Sep 18, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

6.6K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoscience

Background:

  • Molybdenum disulfide (MoS2) and other transition-metal dichalcogenides (TMDCs) are promising for nanoelectronics.
  • Liquid-phase exfoliation produces large-scale MoS2 thin films with varied flake characteristics.

Purpose of the Study:

  • Investigate the impact of edge terminations and flake overlap on charge transport in MoS2 films.
  • Understand how these factors influence electronic conductivity and carrier type.

Main Methods:

  • Utilized first-principles simulations to model MoS2 film structures.
  • Analyzed charge transport properties based on simulated atomic and electronic structures.

Main Results:

  • Identified unique electronic edge states in MoS2 flakes, acting like donor/acceptor states.
  • Flake overlap reduces overall conductance; hexagonal Mo-rich flakes show an 18% drop.
  • Truncated triangular and triangular S-rich flakes exhibit conductance drops of 46% and 58% respectively.
  • A 6.5 nm overlap optimizes interflake conductance.

Conclusions:

  • Edge states and flake overlap are critical for controlling MoS2 thin film conductivity.
  • Findings enable rational design of MoS2 and TMDC films for specific nanoelectronic applications.
  • Selective control over n-type or p-type conductivity is achievable.