Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

998
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
998
MOSFET01:16

MOSFET

592
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
592
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

493
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
493
Characteristics of MOSFET01:17

Characteristics of MOSFET

508
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
508
P-N junction01:11

P-N junction

697
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
697
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

486
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
486

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Luteoloside Inhibits the Progression and Enhances Chemosensitivity to Cytarabine in Acute Myeloid Leukemia via β-Catenin/c-Myc Axis.

Phytotherapy research : PTR·2026
Same author

Asymmetric Total Synthesis and Antihypoxic Neuroinflammatory Evaluation of Notopterol, Notoptol, and Their Natural Analogues.

Organic letters·2026
Same author

Albumin-Bound Paclitaxel (SYHX2011) in Patients with Advanced Breast Cancer: A Multicenter, Randomized, Double-Blind, Phase III Study.

Cancer communications (London, England)·2026
Same author

CD244 modulates bone marrow infiltrating CD8<sup>+</sup> T cells and serves as a prognostic and immunotherapeutic target in acute myeloid leukemia.

Leukemia research·2026
Same author

PAF1c depletion confers chemoresistance to topoisomerase inhibitors.

Cell insight·2026
Same author

Artificial sparse neuron dendrites for visual information inference.

Science advances·2026

Related Experiment Video

Updated: Sep 18, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

Optoelectronic Reservoir Computing Based on 2D P-Type Nb-Doped MoS2 Field-Effect Transistor.

Yitong Chen1,2, Rui Wang3, Dingwei Li2

  • 1School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.

Small (Weinheim an Der Bergstrasse, Germany)
|June 25, 2025
PubMed
Summary

This study presents a novel p-type niobium-doped molybdenum disulfide (MoS2) device for optoelectronic reservoir computing. The device demonstrates high performance and enables accurate pattern recognition, advancing 2D semiconductor applications.

Keywords:
2D materialsneuromorphic computingp‐type semiconductorreservoir computingtransistor

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Related Experiment Videos

Last Updated: Sep 18, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Engineering

Background:

  • Molybdenum disulfide (MoS2) is a 2D semiconductor with excellent n-type properties.
  • High-performance p-type MoS2 is essential for complementary field-effect transistors (CFETs) and neuromorphic computing but remains a challenge.

Purpose of the Study:

  • To develop and characterize an optoelectronic reservoir computing (RC) device using p-type MoS2.
  • To investigate the role of defects in modulating device performance.
  • To demonstrate the device's capability in pattern recognition tasks.

Main Methods:

  • Fabrication of a p-type Nb-doped MoS2 device.
  • Electrical characterization including on/off current ratio and subthreshold swing (SS).
  • Optoelectronic measurements and Kelvin probe force microscopy (KPFM) to analyze defect states.

Main Results:

  • The device exhibits p-type transistor characteristics with an on/off ratio > 106, SS of 234 mV dec-1, and on-state current of 12 µA µm-1.
  • Optically tunable conductance was observed, attributed to Nb-vacancy defect states.
  • 100% accuracy in eight-directional motion recognition and 88% accuracy in general pattern recognition were achieved.

Conclusions:

  • Nb-doped MoS2 can be effectively utilized for high-performance p-type devices.
  • The developed optoelectronic RC device shows promise for advanced computing applications like pattern recognition.
  • The study highlights the importance of defect engineering in 2D materials for tailored functionalities.