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Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang1,2,3, Ming Ming2,4, Ding-Ming Huang1,2,3
1Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
Nano Letters
|June 26, 2025
Summary
Researchers developed a low-temperature method to grow high-mobility germanium nanowires. This breakthrough enables scalable fabrication for advanced nanoelectronics and quantum computing applications.
Area of Science:
- Materials Science
- Nanotechnology
- Quantum Technologies
Background:
- Germanium nanostructures are crucial for advanced integrated circuits and quantum technologies.
- Scalability and high carrier mobility are persistent challenges in germanium materials science.
Purpose of the Study:
- To develop a scalable, low-temperature epitaxial method for site-controlled germanium nanowires.
- To achieve high hole mobility in germanium nanowires for nanoelectronic applications.
Main Methods:
- Utilized molecular beam epitaxy at reduced temperatures to minimize Si-Ge interdiffusion.
- Employed prepatterned ridges on SiGe/Si(001) substrates as templates for controlled nanowire growth.
- Grew site-controlled in-plane germanium nanowires with controlled dimensions and pure composition.
Main Results:
- Achieved pure germanium composition and high crystalline quality by suppressing interdiffusion.
- Demonstrated site-controlled growth of nanowires with precise control over position, length, and spacing.
- Measured hole mobility exceeding 7000 cm²/Vs at 2-20 K in field-effect devices.
Conclusions:
- The low-temperature epitaxial method enables scalable fabrication of germanium nanowire networks.
- This approach provides a reliable platform for high-performance nanoelectronics and multiqubit quantum chips.
