Quantized two terminal conductance, edge states and current patterns in an open geometry 2-dimensional Chern

Junaid Majeed Bhat1, Abhishek Dhar2, R Shankar1

  • 1International Centre for Theoretical Sciences, Tata Institute of Fundamental Research, Bengaluru 560 089, India.

Summary

This study confirms perfect quantization of two-terminal conductance in 2D topological systems, justifying the Landauer-Buttiker theory. It reveals emergent single-channel behavior and localized currents at insulator corners.

Related Concept Videos

Electric Field at the Surface of a Conductor01:26

Electric Field at the Surface of a Conductor

Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...
4.8K
Boundary Conditions for Current Density01:25

Boundary Conditions for Current Density

Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
973
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
924
Electric Field Inside a Conductor01:20

Electric Field Inside a Conductor

When a conductor is placed in an external electric field, the free charges in the conductor redistribute and very quickly reach electrostatic equilibrium. The resulting charge distribution and its electric field have many interesting properties, which can be investigated with the help of Gauss's law.
Suppose a piece of metal is placed near a positive charge. The free electrons in the metal are attracted to the external positive charge and migrate freely toward that region. This region then...
6.3K
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
692
Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
571