Enhanced Hydrogen Adsorption on In2O3(111) via Oxygen Vacancy Engineering
Yishui Ding1,2,3, Jie Chen2,4, Haihong Zheng1
1School of Physics, Hangzhou Normal University, No. 2318, Yuhangtang Road, Hangzhou 311121, P. R. China.
Precision Chemistry
|June 27, 2025
Summary
Oxygen vacancies in indium oxide (In2O3) are crucial for hydrogen dissociation. This study reveals hydrogen adsorbs as hydroxyl groups on In2O3-x surfaces, impacting catalytic activity.
Area of Science:
- Materials Science
- Surface Chemistry
- Catalysis
Background:
- Indium oxide (In2O3) is a promising catalyst for selective hydrogenation reactions.
- The precise mechanism of hydrogen dissociation on In2O3 surfaces is not well understood.
Purpose of the Study:
- To elucidate the role of oxygen vacancies in hydrogen interaction with In2O3 surfaces.
- To investigate the adsorption and dissociation pathways of hydrogen on In2O3.
Main Methods:
- Utilized in situ near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) and ultraviolet photoelectron spectroscopy (UPS).
- Employed infrared reflection absorption spectroscopy (IRRAS) and density functional theory (DFT) calculations.
- Studied both oxidized In2O3(111) and oxygen-deficient In2O3-x (111) surfaces.
Main Results:
- Hydrogen (H2) dissociates and adsorbs as hydroxyl (OH) groups exclusively on the In2O3-x (111) surface.
- Adsorbed hydrogen species act as electron donors, leading to electron accumulation and downward band bending.
- DFT calculations confirm oxygen vacancies are essential for heterolytic H2 dissociation, stabilizing In-H and OH species.
Conclusions:
- Oxygen vacancies significantly influence hydrogen dissociation and adsorption on In2O3.
- The findings provide critical insights into the catalytic mechanisms of indium oxide in hydrogenation and redox reactions.
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