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Characterizing Interlayer Excitons by Spectral Signature in Scattering Visible Near-Field Microscopy.

Oisín Garrity1, Iris Niehues2, Annika Bergmann-Iwe3

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Scattering-type scanning near-field optical microscopy (s-SNOM) reveals nanoscale dielectric responses. This technique successfully images weak interlayer excitons (IXs) in 2D heterostructures, overcoming limitations of traditional methods.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanophotonics

Background:

  • Van der Waals heterostructures host interlayer excitons (IXs) with unique optical properties.
  • Weak oscillator strength and radiative broadening of IXs hinder detection via conventional absorption spectroscopy.

Purpose of the Study:

  • To demonstrate scattering-type scanning near-field optical microscopy (s-SNOM) for nanoscale probing of dielectric response.
  • To characterize weak excitonic resonances in 2D heterostructures, overcoming conventional technique limitations.

Main Methods:

  • Utilized s-SNOM to directly probe the dielectric response at the nanoscale.
  • Validated the approach by measuring the B-exciton in ion-irradiated MoS2.
  • Applied s-SNOM to MoSe2/WSe2 heterostructures to study interlayer excitons.

Main Results:

  • s-SNOM successfully measured the B-exciton in MoS2, observing defect-induced broadening.
  • Identified a Lorentzian resonance at 1.35 eV in MoSe2/WSe2, characteristic of interlayer excitons.
  • Determined that nonradiative decay dominates broadening in the observed IXs.

Conclusions:

  • s-SNOM is a powerful tool for imaging and characterizing weak excitonic resonances at the nanoscale.
  • The technique provides new insights into localized exciton dynamics in 2D heterostructures.
  • Overcomes limitations of conventional spectroscopic methods for studying IXs.