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Correction: Sacrificial layer concept interface engineering for robust, lossless monolithic integration of

Yoon Hee Jang1, Youngseok Lee2,3, Hyeon Sik Seo2

  • 1Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.

Nano Convergence
|June 30, 2025
PubMed
Abstract

No abstract available in PubMed .

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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