Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.2K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.2K
Schottky Barrier Diode01:27

Schottky Barrier Diode

506
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
506
Electron Carriers01:24

Electron Carriers

86.0K
Electron carriers can be thought of as electron shuttles. These compounds can easily accept electrons (i.e., be reduced) or lose them (i.e., be oxidized). They play an essential role in energy production because cellular respiration is contingent on the flow of electrons.
Over the many stages of cellular respiration, glucose breaks down into carbon dioxide and water. Electron carriers pick up electrons lost by glucose in these reactions, temporarily storing and releasing them into the electron...
86.0K
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.1K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

522
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
522
Induced Electric Fields: Applications01:27

Induced Electric Fields: Applications

1.9K
An important distinction exists between the electric field induced by a changing magnetic field and the electrostatic field produced by a fixed charge distribution. Specifically, the induced electric field is nonconservative because it does not work in moving a charge over a closed path. In contrast, the electrostatic field is conservative and does no net work over a closed path. Hence, electric potential can be associated with the electrostatic field but not the induced field. The following...
1.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Genome-wide identification and functional characterization of PP2C genes in the wild relative of sweet potato Ipomoea trifida.

BMC plant biology·2025
Same author

Plasma Interface Modification Endows Bilayered Polypropylene Insulation with Suppressed Space Charge and Enhanced Breakdown Strength for Submarine Cable Joint.

Langmuir : the ACS journal of surfaces and colloids·2025
Same author

Stem nematode disease resistance-conferring gene identification in sweet potato using combined BSA-Seq and BSR-Seq analyses.

Planta·2025
Same author

Galloping behavior of insulated overhead transmission line based on aerodynamic analysis.

Scientific reports·2025
Same author

Phase Dependence of Surface Charge Measurement on Epoxy Insulator in C<sub>4</sub>F<sub>7</sub>N/CO<sub>2</sub> under AC Voltage.

Polymers·2024
Same author

Optimal Design and Development of Magnetic Field Detection Sensor for AC Power Cable.

Sensors (Basel, Switzerland)·2024

Related Experiment Video

Updated: Sep 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Interface-Engineered Core-Shell Quantum Dots Enable Carrier Confinement in Polymer Nanodielectrics for High-Voltage

Heyu Wang1,2, Zhonglei Li1,2, Zechao Yang1,2

  • 1School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China.

ACS Applied Materials & Interfaces
|June 30, 2025
PubMed
Summary

Novel polymer nanodielectrics using cadmium selenide/zinc sulfide core-shell quantum dots significantly improve high-voltage direct current insulation. These materials reduce charge migration and enhance breakdown strength for reliable power transmission.

Keywords:
carriersdielectricsnanocompositequantum confinementquantum dots

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

Related Experiment Videos

Last Updated: Sep 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Polymer Science

Background:

  • Reliable polymer dielectrics are crucial for high-voltage direct current (HVDC) power transmission.
  • Charge carrier migration limits polymer dielectric performance under extreme electric fields and temperatures.

Purpose of the Study:

  • To engineer novel polymer nanodielectrics based on polyethylene (PE) modified with CdSe@ZnS core-shell quantum dots (QDs).
  • To investigate the impact of QD modification on charge carrier migration and breakdown strength in PE.

Main Methods:

  • Fabrication of PE/QD nanocomposites using solvent-assisted blending.
  • Microstructural analysis for QD dispersion.
  • Electrical conductivity and breakdown strength measurements at various temperatures.
  • Thermally stimulated depolarization current (TSDC) analysis.
  • First-principles calculations of interfacial energy barriers.

Main Results:

  • Optimized 0.10 wt % QD-modified PE showed a 59.2% reduction in DC conductivity at 30 °C and 70.2% at 90 °C.
  • Breakdown strength improved by 25.1% at 90 °C.
  • Core-shell QDs introduced deep trap energy levels (1.007-1.075 eV) and high interfacial energy barriers (up to 5.31 eV), effectively localizing charge carriers.
  • Excessive QD concentrations (>0.15 wt %) led to reduced performance due to overlapping and enhanced tunneling.

Conclusions:

  • CdSe@ZnS core-shell QDs are effective in engineering polymer nanodielectrics for HVDC applications.
  • Dual carrier localization mechanisms (deep trapping and quantum confinement) enhance insulation properties.
  • QD concentration must be optimized to prevent performance degradation.