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Spalled Barium Titanate Single Crystal Thin Films for Functional Device Applications.

Prachi Thureja1, Andrew W Nyholm1, Martin Thomaschewski1

  • 1Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States.

Nano Letters
|July 1, 2025
PubMed
Summary

Researchers developed a scalable method to create high-quality single-crystal barium titanate (BTO) thin films using stress-induced spalling. These films exhibit superior electro-optic properties, outperforming existing thin film materials for advanced devices.

Keywords:
barium titanateelectro-opticsingle crystalspallingthin film

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Area of Science:

  • Materials Science
  • Crystallography
  • Optoelectronics

Background:

  • Conventional thin film fabrication methods struggle to produce large-area, high-quality single-crystal microstructures.
  • This limitation hinders the performance of functional devices reliant on precise crystalline orientation.

Purpose of the Study:

  • To introduce a scalable fabrication technique for single-crystal barium titanate (BTO) thin films.
  • To demonstrate the potential of spalling for producing high-performance thin films for optoelectronic applications.

Main Methods:

  • Utilizing stress-induced exfoliation (spalling) from bulk single-crystal substrates.
  • Controlling thin film thickness from 100 nm to 15 μm and lateral dimensions up to several millimeters.
  • Performing electro-optic characterization to determine Pockels coefficients.

Main Results:

  • Successfully fabricated single-crystal BTO thin films with controllable thickness and large lateral dimensions.
  • Measured Pockels coefficients of r33 = 55 pm/V (multidomain) and 160 pm/V (single-domain).
  • Projected r42 coefficient up to 1980 pm/V under unclamped conditions.

Conclusions:

  • Spalled BTO single-crystal thin films retain bulk electro-optic properties.
  • The performance of these spalled films surpasses that of commercial thin film lithium niobate.
  • These films are highly suitable for integration into advanced photonic and optoelectronic devices.