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Related Experiment Video

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Floquet-Bloch valleytronics.

Sotirios Fragkos¹, Baptiste Fabre¹, Olena Tkach^2,3

¹Université de Bordeaux - CNRS - CEA, CELIA, UMR5107, Talence, France.

Nature Communications

|July 2, 2025

Summary

This summary is machine-generated.

Researchers introduced Floquet-Bloch valleytronics by creating valley-polarized Floquet-Bloch states in 2H-WSe2 using light pulses. This breakthrough allows control over exotic quantum phases and orbital character in 2D materials.

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Area of Science:

Quantum physics
Condensed matter physics
Materials science

Background:

Floquet-Bloch states emerge from time-periodic driving of electrons, enabling control of quantum phases.
Transition metal dichalcogenides possess broken inversion symmetry, leading to Berry curvature and chiroptical selection rules crucial for valleytronics.

Purpose of the Study:

To introduce and demonstrate Floquet-Bloch valleytronics by bridging Floquet engineering and valleytronics.
To investigate the formation and properties of valley-polarized Floquet-Bloch states in 2D materials.

Main Methods:

Utilizing time- and polarization-resolved extreme ultraviolet momentum microscopy.
Employing state-of-the-art ab initio theory for analysis.
Investigating quantum-path interference between Floquet-Bloch and Volkov states.

Main Results:

Demonstrated the formation of valley-polarized Floquet-Bloch states in 2H-WSe2 using below-bandgap circularly polarized light.
Revealed the dependence of quantum-path interference on valley pseudospin and light polarization.
Showcased control over orbital character of Floquet-engineered states via extreme ultraviolet photoemission circular dichroism.

Conclusions:

Established Floquet-Bloch valleytronics as a new paradigm for controlling quantum phenomena in 2D materials.
Linked Floquet engineering with quantum-geometric light-matter coupling.
Highlighted the potential for novel valleytronic devices based on engineered quantum states.