Related Experiment Video
Updated: Sep 17, 2025

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
Improper antiferroelectricity in NaNbO3-based perovskites driven by antiferrodistortive modulation
Chao Xu1, Nengneng Luo2, Cenchen Zhong1
1Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong, China.
None:
Perovskite materials exhibit a wide array of fascinating properties arising from various structural instabilities and the interplay between them. Probing such instabilities demands the use of high-resolution, high-sensitivity characterization techniques to prototypical materials with minimized complexity. Here we present the discovery of unconventional improper antiferroelectricity driven by antiferrodistortive modulation in NaNbO3-based perovskites, using advanced scanning transmission electron microscopy conducted on compositionally engineered samples, with a focus on Mn-doped (Na0.65Ag0.20Ca0.15)(Nb0.85Ti0.15)O3. Contrary to the prevailing understanding that such octahedral-rotation-driven improper polarization requires symmetry breaking at the interfaces in layered perovskites, our observation indicates that it can also be enabled in non-layered perovskites, by modulated octahedral rotations following an alternating sequence of (a-b-c+)m (m = integer) and a-b+c+ that is tunable via chemical doping. Combining with first-principles calculations and group theoretical analysis, we reveal a multimode interaction picture to generate the unique dipole order, resolving its long-standing structural ambiguity. The identified mechanism for octahedral-rotation-driven improper polarization represents a new design freedom to tailor the interplay of instabilities for coupled functionalities in perovskite oxides.
More Related Videos
Related Concept Videos
Ferromagnetism
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
π Electron Effects on Chemical Shift: Overview

