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Air-processed efficient and pure green perovskite LEDs based on a PVP-modified NiOx interface layer

Jingyi Ding1,2, Shuai Yang1,3, Yiman Zhang1

  • 1Institute of Physics, Henan Academy of Sciences, Zhengzhou, China. wanghailong@hnas.ac.cn.

Chemical Communications (Cambridge, England)
|July 2, 2025
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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