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Updated: Sep 17, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
The structural origin of extraordinary plasticity in polycrystalline semiconductors with low symmetry
Shenghong Ren1,2, Heyang Chen3, Huangliu Fu1
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
Abstract:
Ductile polycrystals are usually metals with high-symmetry structures that provide multiple slip systems to coordinate the synergetic deformation of adjacent grains. However, while exceptional plasticity was recently discovered in a series of low-symmetry semiconductors, their deformation mechanism remains mysterious. Here, taking monoclinic Ag4SSe as a case study, we show that the inherent high-symmetry anion sublattice with a quasi-body-centered cubic (bcc) structure is embedded in the monoclinic matrix. This, coupled with the highly diffuse cations, results in multiple slip systems and is responsible for the superior plasticity as normally unexpected in low-symmetry structures. We observe typical slip systems conforming with those of the bcc structure by experiment. This finding clarifies the deformation mechanism of Ag2S-based low-symmetry semiconductors and sheds light on future exploration of ductile inorganic semiconductors.
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