Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

492
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
492
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

483
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
483
Biasing of P-N Junction01:16

Biasing of P-N Junction

897
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
897
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

339
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
339
Biasing of FET01:22

Biasing of FET

372
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
372
MOSFET Amplifiers01:17

MOSFET Amplifiers

226
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
226

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Soft tissue degeneration 10+ years after ACLR and their association with radiographic PTOA and knee pain development: radiomic analysis using qMRI approach in MOON nested on-site cohort.

Osteoarthritis imaging·2026
Same author

Dual-interface stabilization of low-iridium anodes for durable proton exchange membrane water electrolysis.

Nature communications·2026
Same author

Targeting macrophage ferritin heavy chain mitigates ferroptosis and lung injury in experimental acute respiratory distress syndrome.

Nature communications·2026
Same author

Genome-wide association study on soybean canopy wilting under drought stress conditions in a rainout-shelter greenhouse.

Frontiers in plant science·2026
Same author

Clinical Benefit and Remaining Risks of Kidney Transplantation in Older Patients: A Matched Comparison With CKD Patients.

Journal of the American Geriatrics Society·2026
Same author

<i>AtGATA5</i> contributes to ABA-mediated seed germination by promoting <i>NCED3</i> and <i>ABI4</i> expression in <i>Arabidopsis thaliana</i>.

Plant signaling & behavior·2026

Related Experiment Video

Updated: Sep 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse

JaeHyeong Park1,2, Hyo-Bae Kim3, Sang Min Yu1,4

  • 1Department of Electrical and Electronic Engineering, Hanyang University, Ansan, 15588, Korea.

Scientific Reports
|July 2, 2025
PubMed
Summary
This summary is machine-generated.

Increasing drive current in oxide semiconductor transistors is key for better displays and faster memory. This study shows that while high-κ dielectrics boost performance, interface traps limit gains, highlighting the need to reduce them for optimal device enhancement.

Keywords:
High-κ gate dielectricInGaZnO transistorsInterface trapsOxide semiconductorsSingle-pulse charge pumping

More Related Videos

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
11:45

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

14.7K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K

Related Experiment Videos

Last Updated: Sep 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
11:45

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

14.7K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Enhancing drive current in oxide semiconductor transistors is critical for advanced electronics like high-resolution displays and faster memory.
  • High-mobility materials improve current but pose manufacturing challenges; thus, improving current without changing channel material is desirable.
  • High-κ gate dielectrics offer a route to boost gate capacitance and transistor performance.

Purpose of the Study:

  • To systematically investigate the effect of different high-κ gate dielectrics on Indium Gallium Zinc Oxide (InGaZnO) transistor performance.
  • To identify the factors limiting drive current enhancement when using high-κ dielectrics.
  • To quantify the role of interface traps and propose methods for their reduction.

Main Methods:

  • Fabrication and electrical characterization of InGaZnO transistors with SiO₂, HfO₂, and ZrO₂ gate insulators.
  • Analysis of drive current enhancement relative to the dielectric constant (κ) of the gate insulators.
  • Device simulations to understand the interplay of contact resistance, channel capacitance, and interface trap density.
  • Quantification of interface trap densities using the single-pulse charge pumping method.

Main Results:

  • Drive current increased with higher dielectric constants, but less than theoretically predicted based on κ alone.
  • HfO₂ (κ=17) and ZrO₂ (κ=30) showed drive current enhancements of 2.8x and 7x, respectively, compared to SiO₂ (κ=3.9).
  • Device simulations and experiments identified interface trap density as a primary limiting factor, especially for HfO₂.
  • Single-pulse charge pumping confirmed high interface trap densities in HfO₂, correlating with reduced transconductance.

Conclusions:

  • While high-κ dielectrics effectively increase gate capacitance, their full potential for enhancing InGaZnO transistor drive current is significantly limited by interface trap density.
  • Reducing interface traps is crucial for maximizing the benefits of high-κ dielectrics and achieving substantial drive current improvements.
  • This research provides a pathway for optimizing oxide semiconductor transistors by focusing on interface engineering alongside dielectric selection.