Polarization Signal Amplification of 2D GeSe-Based Polarization-Sensitive Photodetectors

Area of Science:

• Optoelectronics
• Materials Science
• Nanotechnology

Background:

• Polarization-sensitive photodetectors are crucial for analyzing material properties.
• Existing devices based on 2D semiconductors have limited polarization ratios (PR<10), hindering practical use.
• In-plane anisotropic 2D materials offer miniaturization potential for polarizer-free detectors.

Purpose of the Study:

• To enhance the polarization ratio (PR) of 2D semiconductor-based photodetectors.
• To develop a strategy for improved polarization-sensitive imaging and optoelectronic sensing.
• To enable on-chip integration of high-performance polarization detection.

Main Methods:

• A field-effect transistor (FET)-based amplification strategy was employed.
• 2D Germanium Selenide (GeSe) photodetectors were utilized.
• SMT-Si transistors were identified as optimal due to stability, sharp subthreshold, and noise immunity.

Main Results:

• The PR of 2D GeSe photodetectors was significantly enhanced from 2.1 to 54.8.
• Polarization-induced resistance variations dynamically modulated gate potentials, amplifying output anisotropy.
• High PR signals improved image contrast and recognition accuracy, reducing machine learning computational costs by over 60%.

Conclusions:

• The proposed FET amplification strategy effectively enhances PR in 2D photodetectors.
• This method benefits high-resolution polarization imaging and advanced optoelectronic sensing.
• The findings pave the way for practical applications of polarizer-free polarization-sensitive photodetectors.