Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

575
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
575
MOS Capacitor01:25

MOS Capacitor

988
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
988
Biasing of FET01:22

Biasing of FET

372
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
372
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

491
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
491
MOSFET01:16

MOSFET

589
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
589
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

932
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
932

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gα<sub>q</sub> activation of free fatty acid receptor 4 suppresses metabolic dysfunction by disrupting Nr1h3-PPARγ axis.

Nature communications·2026
Same author

Electric Breakdown of Dielectric Polymers is Strongly Correlated to Mechanical Toughness.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Regulatory networks of post-translational modifications in diabetic kidney disease: from pathogenic mechanisms to therapeutic frontiers.

Frontiers in endocrinology·2026
Same author

Magnetic Nanoparticles as a Theranostic Platform in Brain Tumor Treatment: Surmounting the Bench-to-Bedside Barriers.

International journal of nanomedicine·2026
Same author

Adaptive Sensor Fusion for Robust Perception in Dense Fog: A Gated Vision and LiDAR Integration Framework.

Sensors (Basel, Switzerland)·2026
Same author

Spatial Transcriptomics Delineates the Inflammatory Landscape of Human Dental Pulp: Regional Crosstalk and Therapeutic Implications.

International endodontic journal·2026

Related Experiment Video

Updated: Sep 17, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Laterally Gated CuInP2S6 Ferroelectric Field Effect Transistors for Neuromorphic Computing.

Youna Huang1,2,3, Linkun Wang1,2,3, Fengyuan Zhang1,3

  • 1Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.

ACS Applied Materials & Interfaces
|July 4, 2025
PubMed
Summary

This study introduces novel 2D laterally gated ferroelectric field-effect transistors (LG-FeFETs) for advanced AI. These devices offer multilevel data processing and tunable synaptic functions, outperforming traditional transistors for neuromorphic computing.

Keywords:
CuInP2S6MoS2artificial neural networkferroelectric field effect transitorslaterally gated field effect transistorsreservoir computing

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.9K

Related Experiment Videos

Last Updated: Sep 17, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.9K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Computer Engineering

Background:

  • The increasing demand for artificial intelligence (AI) drives the need for efficient data storage and neuromorphic computing.
  • Ferroelectric field-effect transistors (FeFETs) offer a potential solution to the von Neumann architecture bottleneck by integrating memory and processing.
  • Laterally gated FeFETs (LG-FeFETs) provide advantages like low leakage current and reduced device height.

Purpose of the Study:

  • To develop and characterize two-dimensional (2D) laterally gated FeFETs (LG-FeFETs) using a van der Waals heterostructure of ferroelectric CuInP2S6 (CIPS) and MoS2.
  • To investigate the multilevel data processing capabilities and tunable synaptic functions of these 2D LG-FeFETs.
  • To evaluate the performance of these devices in neuromorphic computing applications, including neural network training and reservoir computing.

Main Methods:

  • Fabrication of 2D LG-FeFET devices using CIPS and MoS2 in a van der Waals heterostructure.
  • Electrical characterization to measure memory window, leakage current, and on/off ratio.
  • In situ piezoresponse force microscopy (PFM) to analyze polarization dynamics.
  • Implementation of devices for online training of neural networks and reservoir computing.

Main Results:

  • The 2D LG-FeFETs demonstrated a large memory window (10 V), low leakage current (<0.01 nA), and a high on/off ratio (10^5).
  • Devices successfully emulated synaptic plasticity (long-term and short-term) under electrical stimuli.
  • High recognition accuracy (97.4%) was achieved for handwritten digits using the synaptic device for neural network training.
  • Reservoir computing for image classification was demonstrated based on the device's short-term plasticity.

Conclusions:

  • The developed 2D LG-FeFETs show significant potential for high-density data processing systems.
  • These devices are promising candidates for next-generation neuromorphic computing applications.
  • The study highlights the control of multiple conductance states by polarization evolution dynamics in 2D LG-FeFETs.