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Updated: Sep 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Theoretical limits of electron and hole doping in single-layer graphene from DFT calculations
Dawid Ciszewski1, Wojciech Grochala1
1Centre of New Technologies, University of Warsaw, Banacha 2C St., 02-097 Warsaw, Poland. d.ciszewski@cent.uw.edu.pl.
None:
Density functional theory calculations suggest a pronounced hole-electron doping asymmetry in single-layer graphene. It turns out that a single graphene sheet can sustain doping levels of up to 0.1 holes or up to a remarkably large 1.9 electrons per atom while maintaining dynamical (phonon) stability. Estimates of the superconducting critical temperature in the electron-doped regime based on McMillan's formula reveal two local maxima in the function of the doping level, which correlate with the local maxima of the electron-phonon coupling constant.
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