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Zongwen Li1, Yunfei Xie1, Zishun Li2

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Summary
This summary is machine-generated.

We developed a novel silicon nanowire photodetector with graphene for enhanced near-infrared (NIR) light detection. This device overcomes limitations of traditional silicon avalanche photodetectors (Si-APDs), improving performance for telecommunication applications.

Keywords:
SiO2-passivated Si nanowiresconfinement-enhanced avalanche photodetectorscore−shell structuregrapheneheterojunctionnear-infrared

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Silicon-based avalanche photodetectors (Si-APDs) are crucial for CMOS-compatible optoelectronics but struggle with weak near-infrared (NIR) absorption and performance limitations.
  • Conventional Si-APDs face challenges like nonuniform avalanche triggering, high multiplication noise, and surface recombination, hindering their use in emerging NIR detection.

Purpose of the Study:

  • To engineer a novel photodetector overcoming limitations of conventional Si-APDs for enhanced NIR detection.
  • To leverage photon confinement and localized field enhancement for improved avalanche photodetection at 1550 nm.

Main Methods:

  • Fabrication of a SiO2-passivated Si nanowire (SiO2-SiNW)/graphene confinement-enhanced photodetector utilizing vertical SiNWs as a core-shell nanoresonator.
  • Employing photon confinement within the nanostructure to boost light absorption and localized field enhancement at the SiNW/graphene van der Waals (vdW) interface for avalanche photodetection.

Main Results:

  • The device demonstrated a high responsivity of 56.58 A/W and an avalanche gain of 2.64 × 10^4.
  • Performance is attributed to the synergistic effects of nanoresonator-enhanced light-matter interaction and efficient carrier multiplication in a confined avalanche regime.

Conclusions:

  • The developed SiO2-SiNW/graphene photodetector offers a promising solution for NIR detection challenges.
  • This integrated platform of dielectric-engineered nanostructures and vdW heterostructures enables precise control over photon management and carrier transport for advanced optoelectronic systems.