Rashba effect modulation in two-dimensional A₂B₂Te₆ (A = Sb and Bi; B = Si and Ge) materials via charge transfer

Area of Science:

• Materials Science
• Condensed Matter Physics
• Quantum Mechanics

Background:

• The development of spintronics relies heavily on designing 2D Rashba semiconductors.
• Understanding and controlling the Rashba effect is key to advancing spintronics.

Purpose of the Study:

• To theoretically design novel 2D Rashba semiconductors with Janus structures.
• To explore efficient and controllable methods for modulating the Rashba effect.
• To investigate the potential of A2B2Te6 materials for spintronics applications.

Main Methods:

• First-principles calculations were employed to design and analyze various Janus structures.
• The intrinsic electric field and its relationship with the Rashba constant were investigated.
• A strategy involving adatom introduction was proposed and analyzed.

Main Results:

• Numerous ideal 2D Rashba semiconductors were successfully designed from A2B2Te6 materials.
• A quantitative relationship between charge transfer, intrinsic electric field, and Rashba constant was established.
• The feasibility of Janus structures and adatom-adsorbed systems was examined.

Conclusions:

• The study presents a detailed analysis of A2B2Te6-based Rashba systems.
• A novel strategy for efficiently and controllably modulating the Rashba constant via charge transfer reconfiguration is proposed.
• This work contributes to the advancement of 2D Rashba semiconductors for spintronics.