Laser-Induced Selective Modifications of 2D InSe for Emerging Volatile Memristors

Two-dimensional (2D) materials, distinguished by their extraordinary electronic, optical, and mechanical properties, have demonstrated exceptional potential as revolutionary building blocks for next-generation electronic devices and high-performance memristors. However, their intrinsic properties often limit their applicability in resistive switching (RS) devices, necessitating precise modification techniques. This study explores the laser-induced modification of 2D indium selenide (InSe) nanoflakes and its impact on the RS performance. Experimental characterization reveals that laser irradiation induces controlled structural modifications, including thinning, oxidation, and the formation of defective and amorphous structures by adjusting the laser power and irradiation time. Additionally, experimental observations integrated with first-principles density functional theory (DFT) calculations demonstrate that laser-induced defects, specifically indium and selenium vacancies, facilitate the migration of titanium (Ti) cations. These defects promote the formation of conductive filaments (CFs), transforming 2D InSe from non-RS to a volatile RS performance. Moreover, the fabricated volatile memristor exhibits high switching ratios (10²-10³), low switching voltage variability (9.4%), and excellent stability, making it an ideal candidate for high-performance memristors and neuromorphic computing systems. This work elucidates fundamental mechanisms underlying laser-induced structural modifications in optimizing 2D materials toward advanced memory devices. The findings establish laser processing as a strategic platform for developing memristive devices with enhanced switching characteristics.