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Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Sep 16, 2025

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

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Elevated sulfide all-solid-state battery performance enabled by boron and phosphorus doping in nano silicon anodes.

Yuxing Shen¹, Shenghao Jing², Huaqing Shen³

¹School of Metallurgy and Environment, Central South University, Changsha 410083, China.

Journal of Colloid and Interface Science

|July 10, 2025

Summary

High-content doping of silicon anodes enhances sulfide all-solid-state batteries (ASSBs). Phosphorus-doped silicon anodes show improved capacity retention, boosting energy density and safety for next-generation batteries.

Keywords:

Boron Doped silicon Phosphorus Prelithiation Sulfide all-solid-state batteries

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Last Updated: Sep 16, 2025

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Published on: August 12, 2013

Area of Science:

Materials Science
Electrochemistry
Energy Storage

Background:

Sulfide all-solid-state batteries (ASSBs) with silicon (Si) anodes and high-nickel cathodes promise high energy density and safety.
Low electronic conductivity of Si anodes limits their performance in ASSBs.
Element doping is a strategy to enhance Si anode conductivity.

Purpose of the Study:

To investigate the effects of N-type (phosphorus) and P-type (boron) doping on Si anodes in ASSBs.
To understand how doping type and content influence anodic performance and stability.
To optimize Si anodes for high-performance ASSBs.

Main Methods:

Systematic study of N-type and P-type doped Si anodes in ASSBs.
Analysis of doping element migration during lithiation and amorphization.
Electrochemical performance testing, including capacity retention after cycling.

Main Results:

Low-content dopants migrate, forming low-conductivity phases that hinder Li+ migration.
High-content doping maintains a stable conductive network within Si particles.
N-type Si with high phosphorus content forms conductive Li3P, improving lithium utilization.
High-content N-type Si anodes achieved 76.24% capacity retention after 100 cycles, outperforming raw Si (70.61%).

Conclusions:

High-content doping is crucial for stable and conductive Si anodes in ASSBs.
N-type doping with phosphorus offers superior performance due to enhanced lithium utilization.
Optimized doped Si anodes are vital for advancing high-energy-density and safe ASSBs.