Solution-processable phototransistor of PbS quantum dots/ZnO for highly responsive 1550 nm near infrared
Zexun Pan1, Jiayi Zhang2, Lei Zhang1
1Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-constructed by the Province and Ministry, Hubei Key Laboratory of Polymer Materials, College of New Energy and Electrical Engineering, Hubei University, Wuhan 430062, PR China.
Abstract:
Due to the low-cost in manufacturing and good compatibility with flexible substrate, lead sulfide quantum dots (PbS QDs) are increasingly regarded as a promising active material candidate for next-generation near-infrared (NIR) photodetectors. In this study, a highly sensitive phototransistor of composite film of PbS QDs and ZnO are demonstrated through combining the excellent light absorption properties of PbS QDs with the high carrier mobility of ZnO. The PbS QDs /ZnO hybrid phototransistors exhibits an ultrahigh responsivity (R) of 1.87 × 102 A/W and detectivity (D⁎) of 2.81 × 1012 Jones under 1550 nm NIR illumination. Furthermore, a 3 × 3 phototransistor array is successfully fabricated to demonstrate their potential of applications in NIR image sensor systems. Our research validates the PbS QDs as a possibility for future optoelectronic applications.
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