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Nitrogen-driven plasma modulation for tuning silicon-vacancy formation in diamond
Rahul Raj1, N Chandrasekaran N2, K G Pradeep2
1Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), India Centre for Lab-Grown Diamond (InCent-LGD), Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India.
We demonstrate controlled growth of silicon-vacancy (SiV) centers in diamond using microwave plasma chemical vapor deposition. This scalable method enables precise tuning of SiV layers for advanced quantum photonics applications.
Area of Science:
- Materials Science
- Quantum Optics
- Nanotechnology
Background:
- Silicon-vacancy (SiV) centers in diamond are key quantum emitters.
- Their integration into photonic devices is crucial for quantum technologies.
Purpose of the Study:
- To demonstrate controlled growth of delta-doped SiV layers in nanocrystalline diamond.
- To achieve uniform SiV distribution and precise control over layer thickness and doping concentration.
Main Methods:
- Single-step microwave plasma chemical vapor deposition (MPCVD).
- Manipulation of nitrogen flow during growth.
- Optical emission spectroscopy (OES) and atom probe tomography (APT).
Main Results:
- Achieved uniform delta-doped SiV layers in nanocrystalline diamond films.
- Demonstrated precise control over SiV layer thickness and doping concentration up to 3.6 × 10^21 cm^-3.
- Confirmed uniform silicon distribution using APT, independent of microstructural changes.
Conclusions:
- The developed MPCVD process offers a scalable and precise method for creating high-quality SiV layers in diamond.
- This advancement facilitates the integration of SiV centers into nanophotonic cavities for quantum technologies.
