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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

336
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
336

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Nitrogen-driven plasma modulation for tuning silicon-vacancy formation in diamond.

Rahul Raj1, N Chandrasekaran N2, K G Pradeep2

  • 1Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), India Centre for Lab-Grown Diamond (InCent-LGD), Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai, Tamil Nadu 600036, India.

Nanotechnology
|July 11, 2025
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Summary

We demonstrate controlled growth of silicon-vacancy (SiV) centers in diamond using microwave plasma chemical vapor deposition. This scalable method enables precise tuning of SiV layers for advanced quantum photonics applications.

Keywords:
atom probe tomographycross-sectional PL mappingdelta dopingsilicon-vacancysingle photon sources

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Area of Science:

  • Materials Science
  • Quantum Optics
  • Nanotechnology

Background:

  • Silicon-vacancy (SiV) centers in diamond are key quantum emitters.
  • Their integration into photonic devices is crucial for quantum technologies.

Purpose of the Study:

  • To demonstrate controlled growth of delta-doped SiV layers in nanocrystalline diamond.
  • To achieve uniform SiV distribution and precise control over layer thickness and doping concentration.

Main Methods:

  • Single-step microwave plasma chemical vapor deposition (MPCVD).
  • Manipulation of nitrogen flow during growth.
  • Optical emission spectroscopy (OES) and atom probe tomography (APT).

Main Results:

  • Achieved uniform delta-doped SiV layers in nanocrystalline diamond films.
  • Demonstrated precise control over SiV layer thickness and doping concentration up to 3.6 × 10^21 cm^-3.
  • Confirmed uniform silicon distribution using APT, independent of microstructural changes.

Conclusions:

  • The developed MPCVD process offers a scalable and precise method for creating high-quality SiV layers in diamond.
  • This advancement facilitates the integration of SiV centers into nanophotonic cavities for quantum technologies.